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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/GEA34
Repositorysid.inpe.br/marciana/2005/07.05.12.06   (restricted access)
Last Update2005:07.05.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2005/07.05.12.07
Metadata Last Update2018:06.05.01.16.46 (UTC) administrator
Secondary KeyINPE-12856-PRE/8146
ISSN0925-9635
Citation KeyFerreiraAzBeAmAlOlSi:2005:NaFiGr
TitleNanodiamond films growth on porous silicon substrates for electrochemical applications
Year2005
MonthMar-Jul
Access Date2024, May 12
Secondary TypePRE PI
Number of Files1
Size742 KiB
2. Context
Author1 Ferreira, Neidenei Gomes
2 Azevedo, Adriana Faria
3 Beloto, Antonio Fernando
4 Amaral, M.
5 Almeida, F. A.
6 Oliveira, F. J.
7 Silva, R. F.
Resume Identifier1 8JMKD3MGP5W/3C9JHU3
2
3 8JMKD3MGP5W/3C9JGJ8
Group1 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratorio Associado de Sensores e Materiais (INPE, LAS)
2 Univ Aveiro, Dept Engn Ceram & Vidro, Aveiro, P-3800 Portugal
JournalDiamond and Related Materials
Volume14
Number3-7
Pages441-445
History (UTC)2005-07-05 12:07:00 :: sergio -> administrator ::
2006-09-28 22:31:40 :: administrator -> sergio ::
2008-01-07 12:54:03 :: sergio -> administrator ::
2018-06-05 01:16:46 :: administrator -> marciana :: 2005
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Keywordsnanocrystalline diamond
porous electrode
cyclic voltammetry / DOPED DIAMOND ELECTRODES
CHEMICAL-VAPOR-DEPOSITION
CARBON-FIBER CLOTHS
POLYCRYSTALLINE DIAMOND
EFFICIENCY
MECHANISM
OXIDATION
AbstractNanocrystalline diamond (NCD) films were successfully grown on micrometric porous silicon (PS) substrate in a hot filament chemical vapor deposition (HFCVD) reactor. The films were deposited at substrate temperature of 920 K and 6.5 kPa, after seeding pretreatment. The gas flow rate was set in a 50 seem for Ar-CH4-H-2 Mixture. PS substrates were produced by anodic etching using n-type silicon wafers. The morphology, quality and electrochemical response of NCD have been analyzed by scanning electron microscopy (SEM), Raman scattering spectroscopy and cyclic voltammetry (CV) measurements. SEM images have shown faceted nanograins with average size from 30 to 50 nm and uniform surface texture covering all the supports among the pores resulting in an apparent micro honeycomb structure. Raman spectra have exhibited a shoulder at 1550 cm(-1) that is NCD characteristic and have confirmed the good quality films with diamond purity around 90%. Electrochemical response and capacitance behavior of NCD/PS electrodes immersed in aqueous electrolyte solution without redox-active reagents has been explored. The work potential window remains large for NCD, in a similar way of boron doped diamond (BDD), but with a large capacitive background current compared to BDD. NCD/PS presented capacitance values from 230 to 990 mu F cm(-2), while such capacitance values for BDD were between 20 and 40 mu F cm(-2) in the potential range of -0.5 up to 1.0 V x Ag/AgCl. (c) 2005 Elsevier B.V. All rights reserved. .
AreaFISMAT
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4. Conditions of access and use
Languageen
Target Filenanodiamond films.pdf
User Groupadministrator
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
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